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NT5SV64M4AT(L)
NT5SV32M8AT(L)
NT5SV16M16AT(L)
256Mb Synchronous DRAM
REV 1.0
May, 2001
13
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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Non-Minimum Read to Write Interval
COMMAND
NOP
NOP
READ A
WRITE A
NOP
NOP
NOP
DQM
DIN A 0
DIN A 1
DIN A 2
DIN A 3
DIN A 0
DIN A 1
DIN A 2
DIN A 3
tCK2, DQs
CAS latency = 2
tCK3, DQs
CAS latency = 3
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
NOP
CL = 3: DQM needed to
mask first bit of READ data.
CL = 2: DQM needed to mask
first, second bit of READ data.
(Burst Length = 4, CAS latency = 2, 3)
: DQM high for CAS latency = 2
: DQM high for CAS latency = 3