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2

Rev. 1, 2022-02-25

CAB760M12HM3

4600 Silicon Dr., Durham, NC 27703

MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)

Symbol Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

V(BR)DSS Drain-Source Breakdown Voltage

1200

V

VGS= 0 V, TVJ = -40 °C

VGS(th)

Gate Threshold Voltage

1.8

2.5

3.6

VDS = VGS, ID = 280 mA

2.0

VDS = VGS, ID = 280 mA, TVJ = 175 °C

IDSS

Zero Gate Voltage Drain Current

15

400

μA VGS=0V,VDS=1200V

IGSS

Gate-Source Leakage Current

0.12

3

VGS = 15 V, VDS = 0 V

R

DS(on)

Drain-Source On-State Resistance

(Devices Only)

1.33

1.73

mΩ

VGS = 15 V, ID = 760 A

Fig. 2

Fig. 3

2.13

VGS = 15 V, ID = 760 A, TVJ = 175 °C

gfs

Transconductance

548

S

VDS = 20 V, IDS = 760 A

Fig. 4

585

VDS = 20 V, IDS = 760 A, TVJ = 175 °C

EOn

Turn-On Switching Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

20.3

20.7

23.7

mJ

VDS = 600 V,

ID = 760 A,

VGS = -4 V/15 V,

RG(ext) = 1.0 Ω,

L = 13.7

μH

Fig. 11

Fig. 13

EOff

Turn-Off Switching Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

17.9

17.5

17.8

RG(int)

Internal Gate Resistance

0.47

Ω

VAC = 25 mV, f = 100 kHz

Ciss

Input Capacitance

79.4

nF

VGS = 0 V, VDS = 800 V,

VAC = 25 mV, f = 100 kHz

Fig. 9

Coss

Output Capacitance

2.9

Crss

Reverse Transfer Capacitance

90

pF

QGS

Gate to Source Charge

768

nC

VDS = 800 V, VGS = -4 V/15 V

ID = 760 A

Per IEC60747-8-4 pg 21

QGD

Gate to Drain Charge

924

QG

Total Gate Charge

2724

RthJC

FET Thermal Resistance, Junction to Case

0.068

0.073

°C/W

Fig. 17

Symbol Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

VSD

Body Diode Forward Voltage

5.4

V

VGS = -4 V, ISD = 760 A

Fig. 7

4.7

VGS = -4 V, ISD = 760 A, TVJ = 175 °C

trr

Reverse Recovery Time

49

ns

VGS = -4 V, ISD = 760 A, VR = 600 V

di/dt = 20 A/ns, TVJ = 175 °C

Fig. 32

QRR

Reverse Recovery Charge

17.0

μC

IRRM

Peak Reverse Recovery Current

540

A

ERR

Reverse Recovery Energy TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

1.3

3.5

5.5

mJ

VDS = 600 V, ID = 760A,

VGS = -4 V/15 V, RG(ext)= 1.0 Ω,

L = 13.7 μH

Fig. 14

Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)