Data Sheet P15273EJ1V0DS

2

µµµµPA892TD

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

3.3

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

35

mA

Total Power Dissipation

Ptot

Note

115 in 1 element

210 in 2 elements

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy substrate

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−−

100

nA

Emitter Cut-off Current

IEBO

VBE = 1 V, IC = 0 mA

−−

100

nA

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 5 mA

50

70

100

−

Gain Bandwidth Product

fT

VCE = 2 V, IC = 20 mA, f = 2 GHz

18.0

21.0

−

GHz

Insertion Power Gain (1)

S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz

9.0

11.0

−

dB

Insertion Power Gain (2)

S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz

9.5

11.5

−

dB

Noise Figure

NF

VCE = 2 V, IC = 5 mA, f = 2 GHz,

ZS = Zopt

−

1.1

1.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

−

0.24

0.3

pF

Maximum Available Power Gain

MAG

Note 3

VCE = 2 V, IC = 20 mA, f = 2 GHz

−

12.5

−

dB

Maximum Stable Power Gain

MSG

Note 4

VCE = 2 V, IC = 20 mA, f = 2 GHz

−

13.5

−

dB

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when

the emitter is connected to the guard pin

3. MAG =

4. MSG =

hFE CLASSIFICATION

Rank

FB

Marking

kN

hFE Value

50 to 100

(k –

√√√√ (k2 – 1) )

S21

S12

S21

S12