2SC5435 datasheet(5/12 Pages) RENESAS

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ELECTRICAL CHARACTERISTICS (TA = +25

°C)

(1) Q1

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

100

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

100

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 10 mA

110

150

−

Gain Bandwidth Product

VCE = 3 V, IC = 10 mA, f = 2 GHz

10.0

12.0

−

GHz

Insertion Power Gain

S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz

7.0

11.0

−

Noise Figure

VCE = 3 V, IC = 3 mA, f = 2 GHz,

ZS = Zopt

−

1.5

2.5

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

−

0.4

0.7

(2) Q2

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

600

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

600

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 5 mA

100

120

145

−

Gain Bandwidth Product (1)

VCE = 1 V, IC = 5 mA, f = 2 GHz

3.0

4.5

−

GHz

Gain Bandwidth Product (2)

VCE = 1 V, IC = 15 mA, f = 2 GHz

5.0

6.5

−

GHz

Insertion Power Gain (1)

S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz

3.0

4.0

−

Insertion Power Gain (2)

S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz

4.5

5.5

−

Noise Figure

VCE = 1 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

−

1.9

2.5

Reverse Transfer Capacitance

Cre

Note 2

VCB = 0.5 V, IE = 0 mA, f = 1 MHz

−

0.6

0.8

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value of Q1

75 to 150

hFE Value of Q2

100 to 145

Data Sheet PU10332EJ02V0DS

µPA862TS

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