FEATURES

• Low voltage operation

• 2 different built-in transistors (2SC5435, 2SC5800)

Q1: Built-in high gain transistor

fT = 12.0 GHz TYP.,

S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low phase distortion transistor suited for OSC applications

fT = 4.5 GHz TYP.,

S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• 6-pin super lead-less minimold package

BUILT-IN TRANSISTORS

Q1

Q2

Flat-lead 3-pin thin-type ultra super minimold part No.

2SC5435

2SC5800

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA862TS

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA862TS-T3

10 kpcs/reel

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TWIN TRANSISTOR

µPA862TS

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN SUPER LEAD-LESS MINIMOLD

Document No. PU10332EJ02V0DS (2nd edition)

Date Published September 2003 CP(K)

Printed in Japan

 NEC Compound Semiconductor Devices 2002, 2003

The mark

shows major revised points.