Silicon Transistor

µµµµPA832TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

PRELIMINARY DATA SHEET

Document No. P12724EJ1V0DS00 (1st edition)

Date Published August 1997 N

Printed in Japan

1997

©

DESCRIPTION

PACKAGE DRAWINGS (Unit:mm)

The

µPA832TF has two different built-in transistors (Q1

and Q2) for low noise amplification in the VHF band to UHF

band.

FEATURES

• Low noise

Q1 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA

Q2 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA

• High gain

Q1 :

|S21e|2 = 9.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA

Q2 :

|S21e|2 = 8.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA

• 6-pin thin-type small mini mold package

• 2 different transistors on-chip (2SC4226, 2SC4959)

ON-CHIP TRANSISTORS

Q1

Q2

3-pin small mini mold part No.

2SC4226

2SC4959

The

µPA835TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA832TF

Loose products

(50 pcs)

µPA832TF-T1

Taping products

(3 kpcs/reel)

Caution is required concerning excess input, such as from static electricity, because the high-frequency

process is used for this device.

8-mm wide embossed tape.

Pin 6 (Q1 Base), pin 5 (Q2

Emitter), and pin 4 (Q2 Base)

face perforated side of tape.

2.10±0.1

1.25±0.1

B1

Q1

Q2

6

5

4

3

2

1

E2

B2

C1

E1

C2

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

PIN CONNECTIONS

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

PIN CONFIGURATION (Top View)

The information in this document is subject to change without notice.