BLW86 datasheet(12/15 Pages) PHILIPS

tên linh kiện	BLW86

Giải thích chi tiết về linh kiện	HF/VHF power transistor

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12 / 15 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW86

Ruggedness in s.s.b. operation

The BLW86 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: class-AB operation;

f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th =70 °C and PLnom = 50 W P.E.P.

R.F. performance in s.s.b. class-A operation (linear power amplifier)

VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz

Note

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.

Relative to the according peak envelope powers these figures should be increased by 6 dB.

OUTPUT POWER

dB(1)

°C

17 (P.E.P.)

typ. 22

1,7

typ.

−40

<−40

17 (P.E.P.)

typ. 22

1,7

typ.

−42

<−40

Fig.21 Test circuit; s.s.b. class-A.

handbook, full pagewidth

Ω

MGP647

Ω

T.U.T.

C10

C11

+VCC

BY206

BD204

BLW86 bảng dữ liệu(PDF) 12 Page - NXP Semiconductors