August 1986

10

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW86

R.F. performance in s.s.b. class-AB operation (linear power amplifier)

Note

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.

Relative to the according peak envelope powers these figures should be increased by 6 dB.

List of components:

OUTPUT POWER

W

dB

at 47,5 W

(P.E.P.)

mA

°C

5 to 47,5 (P.E.P.)

typ. 19

typ. 45

typ. 1,9

typ.

−30

<−30

50

25

5 to 42,5 (P.E.P.)

typ. 19

−−

typ.

−30

<−30

50

70

C1 = C2 = 10 to 780 pF film dielectric trimmer

C3 = C5 = C6 = 220 nF polyester capacitor

C4 = 56 pF ceramic capacitor (500 V)

C7 = C8 = 15 to 575 pF film dielectric trimmer

L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2

× 5mm

L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)

L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2

× 5 mm

L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2

× 5 mm

R1 =1,2

Ω; parallel connection of 4 × 4,7 Ω carbon resistors

R2 = 39

Ω carbon resistor

Fig.16 Test circuit; s.s.b. class-AB.

handbook, full pagewidth

50

Ω

MGP642

50

Ω

temperature

compensated bias

R1

L2

L1

R2

L4

T.U.T.

L3

C7

C4

C5

C6

C8

C1

C2

C3

+VCC