BLV99SL datasheet(4/10 Pages) PHILIPS

4 / 10 page

September 1991

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV99/SL

CHARACTERISTICS

Tj = 25 °C.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter;

IC = 5 mA

−−

V(BR)CEO

collector-emitter breakdown voltage

VBE =0;

IC = 10 mA

−−

V(BR)EBO

emitter-base breakdown voltage

open collector;

IE = 0.5 mA

3.5

−−

ICES

collector-emitter leakage current

VBE =0;

VCE = 27 V

−−

2mA

hFE

DC current gain

VCE = 20 V;

IC = 150 mA

−−

ESBR

second breakdown energy

L = 25 mH;

RBE = 10 Ω;

f = 50 Hz

0.5

−−

collector capacitance

VCB = 24 V;

IE = Ie =0;

f = 1 MHz

−

Cre

feedback capacitance

VCE = 24 V;

IC = 0;

f = 1 MHz

−

1.3

−

Fig.3

DC current gain as a function of collector

current, typical values.

VCE = 20 V; Tj =25 °C.

handbook, halfpage

0.5

IC (A)

hFE

100

0.1

0.2

0.3

0.4

MBK467

Fig.4

Collector capacitance as a function of

collector-base voltage, typical values.

IE =ie = 0; f = 1 MHz.

handbook, halfpage

010

VCB (V)

(pF)

MBK468

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