September 1991

2

Philips Semiconductors

Product specification

UHF power transistor

BLV99/SL

FEATURES

• Emitter-ballasting resistors for an

optimum temperature profile

• Gold metallization ensures

excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor

encapsulated in a 4-lead SOT172D

envelope with a ceramic cap. It is

designed primarily for use as a driver

stage in base stations in the 900 MHz

communications band. All leads are

isolated from the mounting base.

PINNING - SOT172D

PIN

DESCRIPTION

1

emitter

2

base

3

collector

4

emitter

PIN CONFIGURATION

QUICK REFERENCE DATA

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

MODE OF

OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

c.w. narrow band

900

24

2

> 8

> 55

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

halfpage

2

1

4

3

MSB007

Top view