NCE30P16Q datasheet(1/6 Pages) NCEPOWER

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NCE30P16Q

Pb Free Product

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NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE30P16Q uses advanced trench technology to provide

excellent RDS(ON), low gate charge . This device is suitable for

use as a load switch or in PWM applications.

General Features

●

VDS = -30V,ID = -16A

RDS(ON) < 30mΩ @ VGS=-4.5V

RDS(ON) < 18mΩ @ VGS=-10V

●

High Power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Application

●

PWM applications

●

Load switch

●

Power management

Schematic diagram

Marking and pin assignment

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE30P16Q

DFN3.3X3.3

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

-16

A

Drain Current-Continuous(TC=100 )

℃

ID (100℃)

-11.3

A

Drain Current-Pulsed

(Note 1)

IDM

-64

A

Maximum Power Dissipation

PD

30

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

RθJC

4.2

/W

℃

Số phần tương tự - NCE30P16Q

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Số phần tương tự - NCE30P16Q

Mô tả tương tự - NCE30P16Q

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