BLF247B datasheet(4/16 Pages) PHILIPS

4 / 16 page

August 1994

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF247B

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor section

V(BR)DSS

drain-source breakdown

voltage

ID = 50 mA; VGS =0

−−

IDSS

drain-source leakage current

VGS = 0; VDS =28V

−−

2.5

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

VGSth

gate-source threshold voltage

ID = 50 mA; VDS =10V

−

4.5

gfs

forward transconductance

ID = 5 A; VGS =10V

4.2

−

RDSon

drain-source on-state

resistance

ID = 5 A; VGS =10V

−

0.2

0.3

Ω

IDSX

drain cut-off current

VGS = 10 V; VDS =10V

−

Cis

input capacitance

VGS = 0; VDS =28V; f=1MHz

−

225

−

Cos

output capacitance

VGS = 0; VDS =28V; f=1MHz

−

180

−

Crs

reverse transfer capacitance

VGS = 0; VDS =28V; f=1MHz

−

Fig.4

Temperature coefﬁcient of gate-source

voltage as a function of drain current,

typical values per section.

VDS =10V.

handbook, halfpage

MBD298

110

(mV/K)

(A)

Fig.5

Drain current as a function of gate-source

voltage, typical values per section.

VDS =10V.

(V)

(A)

MBD299

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