August 1994

2

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF247B

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Large signal applications in the

VHF frequency range.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS push-pull

transistor encapsulated in a 4-lead,

SOT262A1 balanced flange type

package with two ceramic caps. The

mounting flange provides the

common source connection for the

transistor.

PINNING - SOT262A1

PIN

DESCRIPTION

1

drain 1

2

drain 2

3

gate 1

4

gate 2

5

source

PIN CONFIGURATION

CAUTION

WARNING

The device is supplied in a antistatic package. The gate-source input must

be protected against static charge during transport or handling.

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO discs are not damaged. All persons who handle, use or dispose

of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

12

34

MAM098

Top view

55

d

g

s

d

g

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

225

28

150

≥12

≥55