September 1992

2

Philips Semiconductors

Product specification

HF/VHF power MOS transistor

BLF175

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for large signal amplifier

applications in the HF/VHF frequency

range.

The transistor has a 4-lead, SOT123

flange envelope, with a ceramic cap.

All leads are isolated from the flange.

A marking code, showing gate-source

for matched pair applications. Refer

to the 'General' section for further

information.

PINNING - SOT123

PIN

DESCRIPTION

1

drain

2

source

3

gate

4

source

PIN CONFIGURATION

CAUTION

The device is supplied in an antistatic package. The gate-source input must

be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

ook, halfpage

1

23

4

MSB057

s

d

g

MBB072

QUICK REFERENCE DATA

Note

1. 2-tone efficiency.

MODE OF

OPERATION

f

(V)

(mA)

(W)

(dB)

(%)

(dB)

class-A

28

50

800

8 (PEP)

> 24

−< −40

class-AB

28

50

150

30 (PEP)

typ. 24

typ. 40

(note 1)

typ.

−35

CW, class-B

108

50

30

30

typ. 20

typ. 65

−