September 1992

8

Philips Semiconductors

Product specification

HF/VHF power MOS transistor

BLF175

List of components (class-A test circuit)

Note

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

COMPONENT

DESCRIPTION

VALUE

DIMENSIONS

CATALOGUE NO.

C1

multilayer ceramic chip capacitor

(note 1)

39 pF

C2

multilayer ceramic chip capacitor

3

× 10 nF

2222 852 47103

C3, C4, C6

multilayer ceramic chip capacitor

100 nF

2222 852 47104

C5

multilayer ceramic chip capacitor

10 nF

2222 852 47103

C7

multilayer ceramic chip capacitor

3

× 100 nF

2222 852 47104

C8

aluminium electrolytic capacitor

10

µF, 63 V

2222 030 28109

C9

multilayer ceramic chip capacitor

(note 1)

24 pF

L1

4 turns enamelled 0.6 mm copper

wire

86 nH

length 3.3 mm;

int. dia. 5 mm;

leads 2 x 2 mm

L2

36 turns enamelled 0.7 mm copper

wire wound on a rod grade 4B1

Ferroxcube drain choke

20

µH

length 30 mm;

int. dia. 5 mm

4330 030 30031

L3

grade 3B Ferroxcube wideband RF

choke

4312 020 36640

L4

8 turns enamelled 1 mm copper wire 189 nH

length 9.5 mm;

int. dia. 5 mm;

leads 2 x 3 mm

R1

0.4 W metal film resistor

24

Ω

R2

0.4 W metal film resistor

1500

Ω

R3

0.4 W metal film resistor

10

Ω

T1

4 : 1 transformer; 18 turns twisted

pair of 0.25 mm copper wire with

10 twists per cm, wound on a grade

4C6 toroidal core

dimensions

9 x 6 x 3 mm

4322 020 97171