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S71GS256 bảng dữ liệu(PDF) 171 Page - SPANSION |
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S71GS256 bảng dữ liệu(HTML) 171 Page - SPANSION |
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171 / 195 page ![]() October 4, 2004 cellRAM_00_A0 CellularRAM Type 2 171 Ad vance Info rmat i o n Asynchronous WRITE Operation The timing parameters provided in Figure 33 require that all WRITE operations must be completed within 4µs. After completing a WRITE operation, the device must either enter standby (by transitioning CE# HIGH), or else perform a second operation (READ or WRITE) using a new address. Figure 61 and Figure 62 dem- onstrate these constraints as they apply during an asynchronous (page-mode- disabled) operation. Either the CE# active period (tCEM in Figure 61) or the ad- dress valid period (tTM in Figure 62) must be less than 4µs during any WRITE operation, otherwise, the extended WRITE timings must be used. Extended WRITE Timing— Asynchronous WRITE Operation Modified timings are required during extended WRITE operations (see Figure 63). An extended WRITE operation requires that both the write pulse width (tWP) and the data valid period (tDW) be lengthened to at least the minimum WRITE cycle time (tWC [MIN]). These increased timings ensure that time is available for both a refresh operation and a successful completion of the WRITE operation. Figure 61. Extended Timing for tCEM Figure 62. Extended Timing for tTM Table 64. Extended Cycle Impact on READ and WRITE Cycles Page Mode Timing Constraint Read Cycle Write Cycle Asynchronous Page Mode Disabled tCEM and tTM > 4µs (See Figure 61 and Figure 62.) No impact. Must use extended WRITE timing. (See Figure 62) Asynchronous Page Mode Enabled tCEM > 4µs (See Figure 61.) All following intrapage READ access times are tAA (not tAPA). Must use extended WRITE timing. (See Figure 63) Burst tCEM > 4µs (See Figure 61.) Burst must cross a row boundary within 4µs. CE# ADDRESS tCEM 4µs < CE# ADDRESS TM< t 4µs |
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