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S71GS256 bảng dữ liệu(PDF) 171 Page - SPANSION

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October 4, 2004 cellRAM_00_A0
CellularRAM Type 2
171
Ad vance
Info rmat i o n
Asynchronous WRITE Operation
The timing parameters provided in Figure 33 require that all WRITE operations
must be completed within 4µs. After completing a WRITE operation, the device
must either enter standby (by transitioning CE# HIGH), or else perform a second
operation (READ or WRITE) using a new address. Figure 61 and Figure 62 dem-
onstrate these constraints as they apply during an asynchronous (page-mode-
disabled) operation. Either the CE# active period (tCEM in Figure 61) or the ad-
dress valid period (tTM in Figure 62) must be less than 4µs during any WRITE
operation, otherwise, the extended WRITE timings must be used.
Extended WRITE Timing— Asynchronous WRITE Operation
Modified timings are required during extended WRITE operations (see Figure 63).
An extended WRITE operation requires that both the write pulse width (tWP) and
the data valid period (tDW) be lengthened to at least the minimum WRITE cycle
time (tWC [MIN]). These increased timings ensure that time is available for both
a refresh operation and a successful completion of the WRITE operation.
Figure 61. Extended Timing for tCEM
Figure 62. Extended Timing for tTM
Table 64. Extended Cycle Impact on READ and WRITE Cycles
Page Mode
Timing Constraint
Read Cycle
Write Cycle
Asynchronous
Page Mode Disabled
tCEM and tTM > 4µs
(See Figure 61 and Figure 62.)
No impact.
Must use extended WRITE
timing.
(See Figure 62)
Asynchronous
Page Mode Enabled
tCEM > 4µs
(See Figure 61.)
All following intrapage READ
access times are tAA (not tAPA).
Must use extended WRITE
timing.
(See Figure 63)
Burst
tCEM > 4µs (See Figure 61.)
Burst must cross a row boundary within 4µs.
CE#
ADDRESS
tCEM
4µs
<
CE#
ADDRESS
TM<
t
4µs



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