S71GS256 datasheet(170/195 Pages) SPANSION

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CellularRAM Type 2

cellRAM_00_A0 October 4, 2004

Advan ce

In form ati o n

How Extended Timings Impact CellularRAM™ Operation

Introduction

This section describes CellularRAM™ timing requirements in systems that per-

form extended operations.

CellularRAM products use a DRAM technology that periodically requires refresh to

ensure against data corruption. CellularRAM devices include on-chip circuitry that

performs the required refresh in a manner that is completely transparent in sys-

tems with normal bus timings. The refresh circuitry imposes constraints on

timings in systems that take longer than 4µs to complete an operation. WRITE

operations are affected if the device is configured for asynchronous operation.

Both READ and WRITE operations are affected if the device is configured for page

or burst-mode operation.

tVP

tVPH

tVS

tWC

tWHZ

tWP

tWPH

tWR

Table 63. READ Timing Parameters—Asynchronous WRITE Followed by Asynchronous READ

Symbol

70ns/80 MHz

85ns/66 MHz

Units

MinMax

tAA

tBHZ

tBLZ

tCBPH

tCEM

µs

tHZ

tLZ

tOE

tOHZ

tOLZ

Table 62. WRITE Timing Parameters—Asynchronous WRITE Followed by Asynchronous READ

Symbol

70ns/80 MHz

85ns/66 MHz

Units

MinMax

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