BFR53 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Oct 28

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz wideband transistor

BFR53

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1

260

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =10V

−−

hFE

DC current gain

IC = 25 mA; VCE = 5 V; see Fig.2

−−

IC = 50 mA; VCE = 5 V; see Fig.2

−−

collector capacitance

IE =ie = 0; VCB = 5 V; f = 1 MHz;

see Fig.3

−

0.9

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

1.5

−

Cre

feedback capacitance

IC = 2 mA; VCE = 5 V; f = 1 MHz;

Tamb =25 °C

−

0.9

−

transition frequency

IC = 25 mA; VCE = 5 V; f = 500 MHz;

see Fig.4

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 30 mA; VCE = 5 V; f = 800 MHz;

Tamb =25 °C; see Fig.5

−

10.5

−

noise ﬁgure

IC = 2 mA; VCE = 5 V; f = 500 MHz;

Tamb =25 °C; see Fig.6

−−

5dB

10 log

–





–





-------------------------------------------------------------- dB˙

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