BFR53 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1997 Oct 28

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz wideband transistor

BFR53

FEATURES

• Very low intermodulation distortion

• Very high power gain.

APPLICATIONS

• Thick and thin-film circuits.

DESCRIPTION

NPN wideband transistor in a plastic

SOT23 package.

PINNING

DESCRIPTION

base

emitter

collector

Fig.1 SOT23.

fpage

MSB003

Top view

Marking code: N1.

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

ICM

peak collector current

> 1 MHz

−

100

Ptot

total power dissipation

Ts ≤ 85 °C

−

250

Cre

feedback capacitance

IC = 2 mA; VCE = 5 V; f = 1 MHz;

Tamb =25 °C

0.9

−

transition frequency

IC = 25 mA; VCE = 5 V; f = 500 MHz;

Tj =25 °C

−

GHz

GUM

maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz;

Tamb =25 °C

10.5

−

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

ICM

peak collector current

> 1 MHz

−

100

Ptot

total power dissipation

Ts ≤ 85 °C (note 1)

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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