BLC10G22XS-401AVT

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© Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet

Rev. 1 — 20 May 2022

11 of 14

BLC10G22XS-401AVT

Power LDMOS transistor

9.

Handling information

[1]

CDM classification C3 is granted to any part that passes after exposure to an ESD pulse of 1000 V.

[2]

HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 12.

ESD sensitivity

ESD model

Class

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002

C3 [1]

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001

2 [2]

Table 13.

Abbreviations

Acronym

Description

3GPP

3rd Generation Partnership Project

AM

Amplitude Modulation

CCDF

Complementary Cumulative Distribution Function

CW

Continuous Wave

DPCH

Dedicated Physical CHannel

ESD

ElectroStatic Discharge

LDMOS

Laterally Diffused Metal-Oxide Semiconductor

MTF

Median Time to Failure

OBO

Output Back Off

PAR

Peak-to-Average Ratio

PM

Phase Modulation

RoHS

Restriction of Hazardous Substances

SMD

Surface Mounted Device

VBW

Video BandWidth

VSWR

Voltage Standing Wave Ratio

W-CDMA

Wideband Code Division Multiple Access

Table 14.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BLC10G22XS-401AVT v.1

20220522

Product data sheet

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