BLC10G22XS-401AVT

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© Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet

Rev. 1 — 20 May 2022

9 of 14

BLC10G22XS-401AVT

Power LDMOS transistor

7.4.3 Group delay

7.4.4 2-Tone VBW

VDS =30V; IDq = 770 mA; VGS(amp)peak = 0.764 V.

Fig 10. Group delay time as a function of frequency; typical values

amp01774

1800

1900

2000

2100

2200

2300

2400

2500

0.5

1

1.5

2

2.5

3

3.5

f (MHz)

td(grp)

d(grp)

td(grp)

(ns)

(ns)

(ns)

VDS =30V; IDq = 770 mA; VGS(amp)peak = 0.746 V: PL = 47.75 dBm; f = 2155 MHz.

(1) IMD low

(2) IMD high

Fig 11. VBW capability

amp01775

1

10

102

103

-70

-60

-50

-40

-30

-20

-10

carrier spacing (MHz)

IMD

IMD

IMD

(dBc)

(dBc)

(dBc)

(1)

(1)

(1)

(2)

(2)

(2)

(1)

(1)

(1)

(2)

(2)

(2)

(1)

(1)

(1)

(2)

(2)

(2)

IMD3

IMD3

IMD3

IMD5

IMD5

IMD5

IMD7

IMD7

IMD7