BFG67SLASHX datasheet(3/16 Pages) PHILIPS

tên linh kiện	BFG67/X

Giải thích chi tiết về linh kiện	NPN 8 GHz wideband transistors

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1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistors

BFG67; BFG67/X; BFG67/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

Ptot

total power dissipation

Ts ≤ 65 °C; see Fig.3; note 1

−

380

Tstg

storage temperature range

−65

150

°C

junction temperature

−

175

°C

Fig.3 Power derating curve.

handbook, halfpage

100

200

400

300

100

200

MBC984 - 1

150

tot

(mW)

(o C)

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

note 1

290

K/W

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