BFG67SLASHX datasheet(4/16 Pages) PHILIPS

4 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistors

BFG67; BFG67/X; BFG67/XR

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector leakage current

VCB =5V; IE =0

−−

hFE

DC current gain

IC = 15 mA; VCE = 5 V

100

−

transition frequency

IC = 15 mA; VCE = 8 V; f = 500 MHz

−

GHz

collector capacitance

IE =ie = 0; VCB = 8 V; f = 1 MHz

−

0.7

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

1.3

−

Cre

feedback capacitance

IC =ic = 0; VCB = 8 V; f = 1 MHz

−

0.5

−

GUM

maximum unilateral power

gain; note 1

IC = 15 mA; VCE =8V;

Tamb =25 °C; f = 1 GHz

−

IC = 15 mA; VCE =8V;

Tamb =25 °C; f = 2 GHz

−

noise ﬁgure

Γs = Γopt; IC = 5 mA; VCE =8V

Tamb =25 °C; f = 1 GHz

−

1.3

−

s = Γopt; IC = 15 mA; VCE =8V;

Tamb =25 °C; f = 1 GHz

−

1.7

−

IC = 5 mA; VCE =8V;

Tamb = 25 °C; f = 2 GHz; ZS =60 Ω

−

2.5

−

IC = 15 mA; VCE =8V;

Tamb =25 °C; f = 2 GHz; ZS =60 Ω

−

–

() 1S

–

()

-------------------------------------------------------------- dB.

log

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