BFG10SLASHX datasheet(2/10 Pages) PHILIPS

2 / 10 page

1995 Aug 31

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz RF power transistor

BFG10; BFG10/X

FEATURES

• High power gain

• High efficiency

• Small size discrete power amplifier

• 1.9 GHz operating area

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Common emitter class-AB

operation in hand-held radio

equipment at 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistor

encapsulated in plastic, 4-pin

dual-emitter SOT143 package.

PINNING

DESCRIPTION

BFG10 (see Fig.1)

collector

base

emitter

BFG10/X (see Fig.1)

collector

emitter

base

emitter

Fig.1 SOT143.

handbook, 2 columns

Top view

MSB014

MARKING

TYPE NUMBER

CODE

BFG10

N70

BFG10/X

N71

QUICK REFERENCE DATA

RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

MODE OF OPERATION

(GHz)

VCE

(V)

(mW)

(dB)

ηc

(%)

Pulsed, class-AB, duty cycle: < 1 : 8

1.9

3.6

200

≥5

≥50

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

250

IC(AV)

average collector current

−

250

Ptot

total power dissipation

up to Ts =60 °C; see Fig.2; note 1

−

400

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

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