BDP32 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 23

Philips Semiconductors

Product speciﬁcation

PNP medium power transistor

BDP32

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −40 V

−−50

IE = 0; VCB = −40 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−50

hFE

DC current gain

IC = −0.5 A; VCE = −12 V; note 1; see Fig.2

−

IC = −2 A; VCE = −1 V; note 1; see Fig.2

−

VCEsat

collector-emitter saturation

voltage

IC = −500 mA; IB = −50 mA; note 1

−−300

IC = −2 A; IB = −200 mA; note 1

−−700

VBEsat

base-emitter saturation voltage

IC = −500 mA; IB = −50 mA; note 1

−−1.2

IC = −2 A; IB = −200 mA; note 1

−−1.5

transition frequency

VCE = −5 V; IC = −250 mA; f = 100 MHz

−

MHz

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