1999 Apr 23

2

Philips Semiconductors

Product specification

PNP medium power transistor

BDP32

FEATURES

• High current (max. 3 A)

• Low voltage (max. 45 V).

APPLICATIONS

• General purpose medium power applications.

DESCRIPTION

PNP medium power transistor in a SOT223 plastic

package. NPN complement: BDP31.

PINNING

PIN

DESCRIPTION

1

base

2,4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM288

Top view

3

2, 4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−45

V

collector-emitter voltage

open base

−−45

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−3A

peak collector current

−−6A

peak base current

−−0.5

A

total power dissipation

−

1.35

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C