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MPC603EC/D bảng dữ liệu(PDF) 5 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  PowerPC 603™ RISC Microprocessor Hardware Specifications
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MPC603EC/D bảng dữ liệu(HTML) 5 Page - NXP Semiconductors

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603 Hardware Specifications
5
Table 2 provides the recommended operating conditions for the 603.
Table 3 provides the package thermal characteristics for the 603.
Table 4 provides the DC electrical characteristics for the 603.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Value
Unit
Core supply voltage
Vdd
3.135 to 3.465
V
PLL supply voltage
AVdd
3.135 to 3.465
V
Input voltage
Vin
–0.3 to 5.5
V
Die-junction temperature
Tj
0 to 105
°C
Notes: These are the recommended and tested operating conditions. Proper device operation outside of these
conditions is not guaranteed.
Table 3. Package Thermal Characteristics
Characteristic
Symbol
Value
Rating
Motorola wire-bond CQFP package die junction-to-case thermal resistance (typical)
θ
JC
2.2
°C/W
IBM C4-CQFP package die junction-to-heat sink base thermal resistance (typical)
θ
JS
1.1
°C/W
Note: Refer to Section 1.8, “System Design Information,” for more details about thermal management.
Table 4. DC Electrical Specifications
Vdd = 3.3
± 5% V dc, GND = 0 V dc, 0 ≤ T
j ≤ 105 °C
Characteristic
Symbol
Min
Max
Unit
Notes
Input high voltage (all inputs except SYSCLK)
VIH
2.2
5.5
V
Input low voltage (all inputs except SYSCLK)
VIL
GND
0.8
V
SYSCLK input high voltage
CVIH
2.4
5.5
V
SYSCLK input low voltage
CVIL
GND
0.4
V
Input leakage current, Vin = 3.465 V
Vin = 5.5 V
Iin
—10
µA1
Iin
—
TBD
µA1
Hi-Z (off-state) leakage current, Vin = 3.465 V
Vin = 5.5 V
ITSI
—10
µA1
ITSI
—
TBD
µA1
Output high voltage, IOH = –9 mA
VOH
2.4
—
V
AR
CH
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D B
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RE
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CA
LE
SE
MI
CO
ND
UC
TO
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INC
.



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