4

603 Hardware Specifications

•

Integrated power management

— Low-power 3.3 volt design

— Internal processor/bus clock multiplier that provides 1/1, 2/1, 3/1 and 4/1 ratios

— Three power saving modes—doze, nap, and sleep

— Automatic dynamic power reduction when internal functional units are idle

•

In-system testability and debugging features through JTAG boundary-scan capability

1.3 General Parameters

The following list provides a summary of the general parameters of the 603.

Technology

0.5

µ CMOS (four-layer metal)

Die size

11.5 mm x 7.4 mm (85 mm2)

Transistor count

1.6 million

Logic design

Fully-static

Package

Surface mount, 240-pin CQFP

Power supply

3.3

± 5% V dc

1.4 Electrical and Thermal Characteristics

This section provides the AC and DC electrical specifications and thermal characteristics for the 603.

1.4.1 DC Electrical Characteristics

The tables in this section describe the 603 DC electrical characteristics. Table 1 provides the absolute

maximum ratings.

Table 1. Absolute Maximum Ratings

Characteristic

Symbol

Value

Unit

Core supply voltage

Vdd

–0.3 to 4.0

V

PLL supply voltage

AVdd

–0.3 to 4.0

V

Input voltage

Vin

–0.3 to 5.5

V

Storage temperature range

Tstg

–55 to 150

°C

Notes:

1. Functional and tested operating conditions are given in Table 2. Absolute maximum ratings are stress

ratings only, and functional operation at the maximums is not guaranteed. Stresses beyond those listed may

affect device reliability or cause permanent damage to the device.

2. Caution: Vin must not exceed Vdd by more than 2.5 V at anytime including during power-on reset.

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