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2N7002BKS

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Product data sheet

Rev. 2 — 23 September 2010

9 of 16

Nexperia

2N7002BKS

60 V, 300 mA dual N-channel Trench MOSFET

ID = 300 mA; VDD =6V; Tamb =25 °C

Fig 14. Gate-source voltage as a function of gate

charge; typical values

Fig 15. Gate charge waveform definitions

VGS =0 V

(1) Tamb = 150 °C

(2) Tamb =25 °C

Fig 16. Source current as a function of source-drain voltage; typical values

QG (nC)

0.0

0.8

0.6

0.2

0.4

017aaa047

2.0

3.0

1.0

4.0

5.0

VGS

(V)

0.0

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

VSD (V)

0.0

1.2

0.8

0.4

017aaa048

0.4

0.8

1.2

IS

(A)

0.0

(1)

(2)