PDTA124E_SER

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Product data sheet

Rev. 8 — 25 November 2011

8 of 17

NXP Semiconductors

PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k

, R2 = 22 k

VCE = 0.3 V

(1) Tamb = 40 C

(2) Tamb =25 C

(3) Tamb = 100 C

VCE = 5V

(1) Tamb = 40 C

(2) Tamb =25 C

(3) Tamb = 100 C

Fig 8.

On-state input voltage as a function of

collector current; typical values

Fig 9.

Off-state input voltage as a function of

collector current; typical values

f=1MHz; Tamb =25 CVCE = 5V; Tamb =25 C

Fig 10. Collector capacitance as a function of

collector-base voltage; typical values

Fig 11. Transition frequency as a function of collector

current; typical values of built-in transistor

006aac802

IC (mA)

-10-1

-102

-10

-1

-1

-10

VI(on)

(V)

-10-1

(1)

(2)

(3)

IC (mA)

-10-1

-10

-1

006aac803

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

VCB (V)

0

-50

-40

-20

-30

-10

006aac804

2

4

6

Cc

(pF)

0

006aac763

IC (mA)

-10-1

-102

-10

-1

102

103

fT

(MHz)

10