BAS70 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Jun 01

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAS70 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT23 or SOT143B standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

continuous forward current

−

IFRM

repetitive peak forward current

tp ≤ 1s; δ≤ 0.5

−

IFSM

non-repetitive peak forward current

tp < 10 ms

−

100

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF =1mA

410

IF =10mA

750

IF =15mA

reverse current

VR = 50 V; note 1; see Fig.4

100

VR = 70 V; note 1; see Fig.4

µA

charge carrier life time (Krakauer

method)

IF =5mA

100

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

2pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

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