PBLS2003D datasheet(10/17 Pages) NEXPERIA

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PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

9 of 16

NXP Semiconductors

PBLS2003D

20 V PNP BISS loadswitch

Tamb =25 °CIC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Fig 9.

TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

Fig 10. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 11. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 12. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

006aaa420

VCE (V)

−0

−6

−4

−2

−0.8

−1.2

−0.4

−1.6

−2.0

(A)

−0

IB = −13 mA

−10.4 mA

−11.7 mA

−9.1 mA

−6.5 mA

−3.9 mA

−5.2 mA

−2.6 mA

−1.3 mA

−7.8 mA

006aaa421

102

RCEsat

(

Ω)

10−1

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aaa422

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aaa423

IC (mA)

−10−1

−104

−103

−1

−102

−10

102

103

RCEsat

(

Ω)

10−1

(1)

(2)

(3)

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