PBLS2003D_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 27 August 2009

3 of 16

NXP Semiconductors

PBLS2003D

20 V PNP BISS loadswitch

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

TR2; NPN resistor-equipped transistor

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive

-

+40

V

negative

-

−10

V

IO

output current

-

100

mA

ICM

peak collector current

tp ≤ 300 µs

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

200

mW

Per device

Ptot

total power dissipation

[1] -

400

mW

[2] -

530

mW

[3] -

600

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1cm2

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Tamb (°C)

0

160

120

40

80

006aaa414

0.4

0.2

0.6

0.8

Ptot

(W)

0

(1)

(2)

(3)