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STM32G0C1NET3 bảng dữ liệu(PDF) 81 Page - STMicroelectronics |
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STM32G0C1NET3 bảng dữ liệu(HTML) 81 Page - STMicroelectronics |
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81 / 159 page ![]() DS13564 Rev 4 81/159 STM32G0C1xC/xE Electrical characteristics 124 5.3.6 Wakeup time from low-power modes and voltage scaling transition times The wakeup times given in Table 37 are the latency between the event and the execution of the first user instruction. Table 37. Low-power mode wakeup times(1) Symbol Parameter Conditions Typ Max Unit tWUSLEEP Wakeup time from Sleep to Run mode -11 11 CPU cycles tWULPSLEEP Wakeup time from Low-power sleep mode Transiting to Low-power-run-mode execution in Flash memory not powered in Low-power sleep mode; HCLK = HSI16 / 8 = 2 MHz 11 14 tWUSTOP0 Wakeup time from Stop 0 Transiting to Run-mode execution in Flash memory not powered in Stop 0 mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 or Range 2 5.6 6 µs Transiting to Run-mode execution in SRAM or in Flash memory powered in Stop 0 mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 or Range 2 22.4 tWUSTOP1 Wakeup time from Stop 1 Transiting to Run-mode execution in Flash memory not powered in Stop 1 mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 or Range 2 9.0 11.2 µs Transiting to Run-mode execution in SRAM or in Flash memory powered in Stop 1 mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 or Range 2 57.5 Transiting to Low-power-run-mode execution in Flash memory not powered in Stop 1 mode; HCLK = HSI16/8 = 2 MHz; Regulator in low-power mode (LPR = 1 in PWR_CR1) 22 25.3 Transiting to Low-power-run-mode execution in SRAM or in Flash memory powered in Stop 1 mode; HCLK = HSI16 / 8 = 2 MHz; Regulator in low-power mode (LPR = 1 in PWR_CR1) 18 23.5 tWUSTBY Wakeup time from Standby mode Transiting to Run mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 14.5 30 µs |
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