3

Electrical characteristics

TJ = 25 °C unless otherwise specified.

3.1

Inverter part

Table 6. Static

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

IDSS

Zero-gate voltage drain current

VDS = 500 V, VCC = 15 V; VBoot = 15 V

1

mA

V(BR)DSS Drain-source breakdown voltage

VCC= Vboot = 15 V, VIN (1) = 0 V , ID = 1 mA

500

V

RDS(on) Static drain source turn-on resistance VCC = Vboot = 15 V, VIN (1) = 0 to 5 V , ID = 0.5 A

3.2

3.6

Ω

VSD

Drain-source diode forward voltage

VIN (1) = 0 “logic state”, ID = 1 A

0.9

1.6

V

1. Applied between HINx, LINx and GND for x=U,V,W.

Table 7. Inductive load switching time and energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ton (1)

Turn-on time

VDD = 300 V,

VCC = Vboot = 15 V,

VIN (2) = 0 to 5 V,

IC = 0.5 A

(see Figure 4. Switching time definition)

-

226

-

ns

tc(on) (1)

Crossover time (on)

-

130

-

toff (1)

Turn-off time

-

248

-

tc(off) (1)

Crossover time (off)

-

56

-

trr

Reverse recovery time

-

155

-

Eon

Turn-on switching energy

-

25

-

µJ

Eoff

Turn-off switching energy

-

3.8

-

1. tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of MOSFET

itself under the internally given gate driving conditions.

2. Applied between HINx, LINx and GND for x=U,V,W.

STIPN1M50T-H

Electrical characteristics

DS11494 - Rev 6

page 7/23