2

Electrical ratings

2.1

Absolute maximum ratings

Table 2. Inverter part

Symbol

Parameter

Value

Unit

VDSS

MOSFET blocking voltage (or drain-source voltage) for each MOSFET (VIN (1) = 0 V)

500

V

± ID

Continuous drain current each MOSFET (TC = 25 °C)

1

A

± IDP (2)

Peak drain current each MOSFET (less than 1 ms)

2

A

PTOT

Total power dissipation for each MOSFET (TC = 25 °C)

10.8

W

1. Applied between HINi, LINi and GND for i = U, V, W.

2. Pulse width limited by max. junction temperature.

Table 3. Control part

Symbol

Parameter

Min.

Max.

Unit

VOUT

Output voltage applied between OUTU, OUTV, OUTW - GND

Vboot - 21

Vboot + 0.3

V

VCC

Low voltage power supply

- 0.3

21

V

VCIN

Comparator input voltage

- 0.3

VCC + 0.3

V

Vop+

Op-amp non-inverting input

- 0.3

VCC + 0.3

V

Vop-

Op-amp inverting input

- 0.3

VCC + 0.3

V

Vboot

Bootstrap voltage

- 0.3

620

V

VIN

Logic input voltage applied between HIN, LIN and GND

- 0.3

15

V

VT/SD/OD

Open-drain voltage

- 0.3

15

V

dVout/dt

Allowed output slew rate

50

V/ns

Table 4. Total system

Symbol

Parameter

Value

Unit

VISO

Isolation withstand voltage applied between each pin and heat sink plate

(AC voltage, t = 60 s)

1000

Vrms

TJ

Power chip operating junction temperature range

-40 to 150

°C

TC

Module case operation temperature range

-40 to 125

°C

STIPN1M50T-H

Electrical ratings

DS11494 - Rev 6

page 5/23