2SC2148, 2SC2149

5

2SC2149

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

25

V

Collector to Emitter Voltage

VCEO

12

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

70

mA

Total Power Dissipation

PT(TA = 25 °C)

290

mW

Total Power Dissipation

PT(Tc = 140 °C)

500

mW

Junction Temperature

Tj

200

°C

Storage Temperature

Tstg

−65 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

0.1

µAVCB = 15 V, IE = 0

Emitter Cutoff Current

IEBO

0.1

µAVEB = 2.0 V, IC = 0

DC Current Gain

hFE

30

70

200

VCE = 10 V, IC = 20 mA

Gain Bandwidth Product

fT

5.0

GHz

VCE = 10 V, IC = 20 mA

Output Capacitance *

Cob

0.6

pF

VCB = 10 V, IE = 0, f = 1.0 MHz

12.7

dB

f = 1.0 GHz

Insertion Gain

S21e2

5.0

6.7

dB

VCE = 10 V, IC = 20 mA

f = 2.0 GHz

1.7

dB

f = 1.0 GHz

Noise Figure

NF

2.6

4.0

dB

VCE = 10 V, IC = 5.0 mA

f = 2.0 GHz

17

dB

f = 1.0 GHz

Maximum Available Gain

MAG

11

dB

VCE = 10 V, IC = 20 mA

f = 2.0 GHz

* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.

TYPICAL CHARACTERISTICS (TA = 25

°C)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

200

100

50

20

10

0.5

1

5

10

50 70

IC

−Collector Current−mA

VCE = 10 V

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

70

50

20

10

5

2

1

0.5

0.5

0.6

0.7

0.8

0.9

VBE

−Base to Emitter Voltage−V

VCE = 10 V