©

1981

DATA SHEET

SILICON TRANSISTORS

DESCRIPTION

The 2SC2148, 2SC2149 are economical microwave transistors

encapsulated into new hermetic stripline packages, "micro X".

These are designed for small signal amplifier, low noise amplifier,

and oscillator applications in the L to C band, and CML circuit use.

FEATURES

2SC2148 NF: 2.1 dB TYP. @f = 500 MHz

2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz

Derating curves of the 2SC2148, 2SC2149.

The maximum junction temperature of these transistors is allowed up to 200

°C, but the ambient or storage

temperature is limitted to 150

°C. The operating junction temperature is estimated with power consumption (PT) and

thermal resistance mentioned on these derating curves.

2SC2148, 2SC2149

Document No. P11809EJ2V0DS00 (2nd edition)

(Previous No. TC-1428)

Date Published August 1996 P

Printed in Japan

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

PACKAGE DIMENSIONS

(Unit : mm)

1

2

0.5±0.05

2.55±0.2

2.1

φ

3

4

4.0 MIN.

1.

2.

3.

4.

Emitter

Collector

Emitter

Base

4.0 MIN.

45

°

The information in this document is subject to change without notice.