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GF7NC60HD bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện GF7NC60HD
Giải thích chi tiết về linh kiện  N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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GF7NC60HD bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STGB7NC60HD, STGF7NC60HD, STGP7NC60HD
Electrical characteristics
Doc ID 10042 Rev 10
5/22
Table 7.
Switching off
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off voltage rise time
VCC = 390 V, IC = 7 A,
RG = 10 Ω , VGE = 15 V
-
27
-
ns
td(off)
Turn-off delay time
72
ns
tf
Current fall time
60
ns
tr(Voff)
Off voltage rise time
VCC = 390 V, IC = 7 A,
RG = 10 Ω , VGE = 15 V
Tj = 125 °C
56
ns
td(off)
Turn-off delay time
116
ns
tf
Current fall time
105
ns
Table 8.
Switching energy
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Eon (1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same
temperature (25°C and 125°C).
2.
Turn-off losses include also the tail of the collector current.
Turn-on switching losses
Turn-off switching loss
Total switching loss
VCC = 390 V, IC = 7 A
RG = 10 Ω, VGE = 15 V,
-
95
115
210
125
150
275
µJ
µJ
µJ
Eon (1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching loss
Total switching loss
VCC = 390 V, IC = 7 A
RG = 10 Ω, VGE = 15 V,
Tj = 125°C
140
215
355
µJ
µJ
µJ
Table 9.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Vf
Forward on-voltage
If = 3.5 A
If = 3.5 A, Tj = 125 °C
-
1.3
1.1
1.9
V
V
trr
ta
Qrr
Irrm
S
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Softness factor of the diode
If = 7 A, VR = 40 V,
di/dt = 100 A/µs
37
22
40
2.1
0.68
ns
ns
nC
A
trr
ta
Qrr
Irrm
S
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Softness factor of the diode
If = 7 A, VR = 40 V,
Tj = 125 °C, di/dt = 100 A/µs
61
34
98
3.2
0.79
ns
ns
nC
A



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