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TLP352F bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor

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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
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TLP352F bảng dữ liệu(HTML) 1 Page - Toshiba Semiconductor

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TLP352,TLP352F
1
Photocouplers GaAℓAs Infrared LED & Photo IC
TLP352,TLP352F
TLP352,TLP352F
TLP352,TLP352F
TLP352,TLP352F
Start of commercial production
2011-05
1.
1.
1.
1. Applications
Applications
Applications
Applications
•
Industrial Inverters
•
MOSFET Gate Drivers
•
IGBT Gate Drivers
•
Induction Cooktop and Home Appliances
2.
2.
2.
2. General
General
General
General
The TLP352 is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED)
optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance
and specifications at temperatures up to 125 . The TLP352 has an internal Faraday shield that provides a
guaranteed Common-mode transient immunity of ±20 kV/µs. It has a totem-pole output that can both sink and
source current. The TLP352 is ideal for IGBT and power MOSFET gate drive.
3.
3.
3.
3. Features
Features
Features
Features
(1)
Buffer logic type (totem pole output)
(2)
Output peak current: ±2.5 A (max)
(3)
Operating temperature: -40 to 125 
(4)
Supply current: 3.0 mA (max)
(5)
Supply voltage: 15 to 30 V
(6)
Threshold input current: 5 mA (max)
(7)
Propagation delay time: 200 ns (max)
(8)
Common-mode transient immunity: ±20 kV/µs (min)
(9)
Isolation voltage: 3750 Vrms (min)
(10) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5 (Note 1)
(Note 1)
(Note 1)
(Note 1)
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (D4)
Option (D4)
Option (D4)
Option (D4).
2016-09-27
Rev.7.0
©2016 Toshiba Corporation


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