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BLE18PS080SN1 bảng dữ liệu(PDF) 5 Page - Texas Instruments

tên linh kiện BLE18PS080SN1
Giải thích chi tiết về linh kiện  TPSM8291x 3-V to 17-V, 2-A/3-A Low-Noise and Low-Ripple Buck Power Module with Integrated Ferrite Bead Filter Compensation
PDF  33 Pages
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Trang chủ  http://www.ti.com
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BLE18PS080SN1 bảng dữ liệu(HTML) 5 Page - Texas Instruments

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6.4 Thermal Information
THERMAL METRIC(1)
TPSM8291x
UNIT
RDU 30-pin QFN
JEDEC 51-7 PCB
TPSM8291xEVM-213
RθJA
Junction-to-ambient thermal resistance
31.3
30.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
22.4
n/a (2)
°C/W
RθJB
Junction-to-board thermal resistance
7.2
n/a (2)
°C/W
ΨJT
Junction-to-top characterization parameter
-4.9 (3)
-3.0 (3)
°C/W
YJB
Junction-to-board characterization parameter
7.1
9.0
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2)
Not applicable to an EVM
(3)
This is a negative value because the case temperature is higher than the die junction temperature due to the integrated inductor
having the highest power dissipation in the module.
6.5 Electrical Characteristics
Over recommended input voltage range, TJ = -40 ℃ to 125 ℃. Typical values are at Vin = 12 V andTJ = 25 ℃ (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
IQ
Quiescent current
EN = High, no load, device switching, fsw
= 1 MHz
5
mA
ISD
Shutdown current
EN = GND, TJ = –40°C to 125°C
0.3
70
µA
VUVLO
Under voltage lockout
VIN rising, TJ = –40°C to 125°C
2.85
2.92
3.0
V
VUVLO
Under voltage lockout
VIN rising
3.04
V
VHYS
Under voltage lockout hysteresis
200
mV
TJSD
Thermal shutdown threshold
TJ rising
170
°C
Thermal shutdown hysteresis
TJ falling
20
°C
CONTROL and INTERFACE
VH_EN
High-level input-threshold voltage at EN/
SYNC
0.97
1.01
1.04
V
VL_EN
Low-level input-threshold voltage at EN/
SYNC
0.87
0.9
0.93
V
VH_SYNC
High-level input-threshold clock signal on
EN/SYNC
EN/SYNC = clock
1.1
V
VL_SYNC
Low-level input-threshold clock signal on
EN/SYNC
EN/SYNC = clock
0.4
V
IEN,LKG
Input leakage current into EN/SYNC
EN/SYNC = GND or VIN, –40
℃ ≤ TJ ≤
125
℃
5
160
nA
RPD
Pull-down resistor on EN/SYNC
EN/SYNC = Low
330
500
kΩ
tdelay
Enable delay time
Time from EN/SYNC high to device starts
switching, RS-CONF = 80.6 kΩ
1
ms
INR/SS
NR/SS source current
67.5
75
82.5
µA
RS-CONF S-CONF resistor step range accuracy
RS-CONF tolerance for all settings
according to Table 7-1
-4
+4
%
CS-CONF
Maximum capacitance connected to S-
CONF pin
30
pF
VPG
Power good threshold
VFB rising, referenced to VFB nominal
93
95
98
%
VPG
Power good threshold
VFB falling, referenced to VFB nominal
88
90
93
%
VPG,OL
Low-level output voltage at PG pin
ISINK = 1 mA
0.4
V
IPG,LKG
Input leakage current into PG pin
VPG = 5 V; –40℃ ≤ TJ ≤ 125℃
5
500
nA
www.ti.com
TPSM82913
SLVSGJ4A – OCTOBER 2022 – REVISED DECEMBER 2022
Copyright © 2022 Texas Instruments Incorporated
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5
Product Folder Links: TPSM82913



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