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STM32L010R8 bảng dữ liệu(PDF) 63 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Value line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0,64-Kbyte Flash memory, 8-Kbyte SRAM, 256-byte EEPROM, ADC
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STM32L010R8 bảng dữ liệu(HTML) 63 Page - STMicroelectronics

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STM32L010K8 STM32L010R8
Electrical characteristics
82
6.3.9
Memory characteristics
RAM memory
Flash memory and data EEPROM
fPLL_OUT
PLL output clock
2
-
32
MHz
tLOCK
PLL input = 16 MHz
PLL VCO = 96 MHz
-115
160
µs
Jitter
Cycle-to-cycle jitter
-
-
± 600
ps
IDDA(PLL)
Current consumption on VDDA
-220
450
µA
IDD(PLL)
Current consumption on VDD
-120
150
1. Guaranteed by characterization results, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
Table 39. PLL characteristics (continued)
Symbol
Parameter
Value
Unit
Min
Typ
Max(1)
Table 40. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
Stop mode (or reset)
1.8
-
-
V
Table 41. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design, not tested in production.
Unit
VDD
Operating voltage
Read / Write / Erase
-
1.8
-
3.6
V
tprog
Programming time for
word or half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
500
700
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA



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