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LM3655 bảng dữ liệu(PDF) 16 Page - National Semiconductor (TI) |
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LM3655 bảng dữ liệu(HTML) 16 Page - National Semiconductor (TI) |
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16 / 21 page ![]() 13.0 Safety Functions (Continued) These specs apply to the entire Normal Temperature Range. Specification Test Conditions Min Typ Max Units Short Circuit Discharge Current “I SHUTOFF-THRESH” The voltage here divided by M4 resistance = I SHUTOFF. V CELL = 3.6V Voltage across M4 −20˚C to +70˚C −20˚C to +125˚C 425 350 1000 1000 mV mV Short Circuit Discharge Current Recovery “ τ SHUTOFF”IRADIO_B+ =ISHUTOFF 0.01 10 ms I SHUTOFF-THRESH refers to a voltage threshold between the Cell pins and the Radio B+ pins. When the voltage between these pins exceeds this voltage threshold, M4 is to open. This circuit reacts very quickly as it is intended to be immediate. This voltage threshold is then referred to current by dividing it by the resistance of M4 (the resistance between the Cell and Radio B+ pins). For example the threshold current (I SHUTOFF) is 7 amps for a threshold voltage of 700 mV and a resistance of 100 m Ω.Itis specified in this manner to reflect the circuit implementation. If the short circuit current is less than the lower limit, there will be no interruption of I RADIOB+ short-circuit current. IREG will reduce I RADIOB+ to 4A in approximately 400 µs. If the current is greater than the upper limit, the short-circuit event will be guaranteed to activate I SC. The sequence is: PMOS M4 is turned off for τ SHUTOFF and allowed to turn on with the current regulating loop limiting current to 4 Amps in 400 µs. Very large currents and associated energy are avoided for this 400 µs settling period. 20111509 FIGURE 6. Short-Circuit Protection Waveform www.national.com 16 |
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