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STW81101AT bảng dữ liệu(PDF) 11 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Multi-band RF frequency synthesizer with integrated VCOs
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STW81101AT bảng dữ liệu(HTML) 11 Page - STMicroelectronics

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STW81101
Electrical specifications
11/42
2.5
Phase noise specification
VCTRL
VCO control voltage(4)
0.4
3
V
LO Harmonic Spurious(4)
-20
dBc
VCO current consumption
25
mA
VCO buffer consumption
15
mA
DIVIDER by 2 consumption
18
mA
DIVIDER by 4 consumption
14
mA
LO OUTPUT BUFFER
Output level
0
dBm
Return Loss(4)
Matched to 50ohm
15
dB
Current Consumption
DIV4 Buff
26
mA
DIV2 Buff
23
mA
Direct Output
37
mA
EXTERNAL VCO (Test purpose only)
Frequency range
3.3
4.4
GHz
Input level
0
+6
dBm
Current Consumption
VCO Internal Buffer
15
µA
PLL MISCELLANEOUS
Current Consumption
Input Buffer, Prescaler,
Digital Dividers, misc.
12
mA
Lock up time (4)
40 KHz PLL bandwidth;
within 1 ppm of
frequency error
150
µs
1.
The frequency step is related to the PFD input frequency as follows:
- fstep = fPFD for Direct Output
- fstep = fPFD/2 for Divided by 2 Output
- fstep = fPFD/4 for Divided by 4 Output
2.
see relationship between ICP and REXT in the Circuit Description section (Charge Pump)
3.
PFD frequency leakage (400KHz) and harmonics
4.
Guaranteed by design and characterization.
Table 5.
Electrical characteristics (continued)
All the Electrical Specifications are intended at 3.3V supply Voltage.
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Table 6.
Phase noise specification
Parameter
Test conditions
Min
Typ
Max
Unit
PHASE NOISE PERFORMANCE(1)
In Band Phase Noise Floor – Closed Loop(2)
Normalized In Band Phase Noise
Floor
ICP=4mA, PLL BW = 50KHz;
including reference clock
contribution
-220
dBc/Hz



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