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L99MOD54XP bảng dữ liệu(PDF) 15 Page - STMicroelectronics

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DS12616 Rev 4
15/35
L99MOD54XP
Electrical specifications
34
tr in
Rise time of input signal DI, CLK, CSN VCC = 5 V
-
100
ns
tf in
Fall time of input signal DI, CLK, CSN
VCC = 5 V
-
100
ns
1. DI timing parameters tested in production by a passed / failed test:
Tj = -40 °C / +25 °C: SPI communication @ 2 MHz.
Tj = +125 °C
SPI communication @ 1.25 MHz.
Table 14. DI timing (continued)
Symbol
Parameter(1)
Test condition
Min.
Typ.
Max.
Unit
Table 15. DO
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
VDOL
Output low-level
VCC = 5 V, ID = -2 mA
0.2
0.4
V
VDOH
Output high-level
VCC = 5 V, ID = 2 mA
VCC - 0.4
VCC - 0.2
V
IDOLK
3-state leakage current
VCSN = VCC,
0V < VDO < VCC
-10
10
μA
CDO (1)
3-state input capacitance
VCSN = VCC,
0 V < VCC < 5.3 V
10
15
pF
1. Value of input capacity is not measured in production test. Parameter guaranteed by design.
Table 16. DO timing
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
tr DO
DO rise time
CL = 100 pF, Iload = -1 mA
-
80
140
ns
tf DO
DO fall time
CL = 100 pF, Iload = 1 mA
-
50
100
ns
ten DO tri L
DO enable time
from 3-state to low-level
CL = 100 pF, Iload = 1 mA
pull up load to VCC
-
100
250
ns
tdis DO L tri
DO disable time
from low-level to 3-state
CL = 100 pF, Iload = 4 mA
pull up load to VCC
-
380
450
ns
ten DO tri H
DO enable time
from 3-state to high-level
CL =100 pF, Iload = -1 mA
pull down load to GND
-
100
250
ns
tdis DO H tri
DO disable time
from high-level to 3-state
CL = 100 pF, Iload = -4 mA pull down
load to GND
-
380
450
ns
td DO
DO delay time
VDO < 0.3 VCC, VDO > 0.7 VCC,
CL = 100pF
-
50
250
ns
Table 17. CSN timing
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
tCSN_HI,stb
CSN HI time, switching from
standby mode
Transfer of SPI command to
Input Register
20
-
-
μs
tCSN_HI,min CSN HI time, active mode
Transfer of SPI command to
input register
4-
-
μs



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