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L9788 bảng dữ liệu(PDF) 122 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Multifunction IC for automotive engine management system
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L9788 bảng dữ liệu(HTML) 122 Page - STMicroelectronics

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Pre-drivers - ExtFET (MOS_Gate1/2/3/4/5) - PRD[1:5]
L9788
122/264
DS12308 Rev 4
9
Pre-drivers - ExtFET (MOS_Gate1/2/3/4/5) - PRD[1:5]
Figure 48. LS External MOSFET Pre-Driver Stage
9.1
LS external MOSFET pre-driver
These 5 pre-drivers are designed to drive LS external MOSFET Load. They are driven by
MSC command.
The push-pull stage is made up of limited source current and sink current. The voltage of
MOS_Drain is monitored for diagnosis.
The driver has the following detection diagnosis:
_Drain short to battery @ pre-driver = On state
_Drain short to ground @ pre-driver = Off state
_Drain open load @ pre-driver = Off state
Predriver1 & Predriver3 can be used to drive ExtMos for O2H Load.
For these two predrivers there is the possibility to select a lower gate current and sink
current (typ = 250 µA).
A dedicated MSC bit is used to select the predriver O2H function (Bit O2H_PDRV =
CONFIG_REG_16_1[7:6]). Considering that this sink/source current is very low the logic will
switch to the selected higher sink/source current after the cmd delay time (typ 150 µs for
CONFIG_REG20[7]=PDRV_O2H_DLY=0 or 300 µs
CONFIG_REG20[7]=PDRV_O2H_DLY=1). After the CMD delay time the current used is the
one selected by CONFIG_REG4=PRDx_IDRV[1:0].
When the Predriver is used for O2H load the overcurrent detection can't be done using a
VDS comparator due to slow voltage slew-rate, for this reason an external Rshunt has to be
used.
GADG0512161207PS
GND1
MOS_Source
MOS_Gate
MOS_Drain
VBAT
Load
MSC Command
LS ExtNMOS Pre-Driver
OFF state
Drain short to Gnd, OL
ON state
Drain short to battery
Driver
VB_IN
I_SOURCE
I_SINK



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