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L9788 bảng dữ liệu(PDF) 122 Page - STMicroelectronics |
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L9788 bảng dữ liệu(HTML) 122 Page - STMicroelectronics |
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122 / 264 page ![]() Pre-drivers - ExtFET (MOS_Gate1/2/3/4/5) - PRD[1:5] L9788 122/264 DS12308 Rev 4 9 Pre-drivers - ExtFET (MOS_Gate1/2/3/4/5) - PRD[1:5] Figure 48. LS External MOSFET Pre-Driver Stage 9.1 LS external MOSFET pre-driver These 5 pre-drivers are designed to drive LS external MOSFET Load. They are driven by MSC command. The push-pull stage is made up of limited source current and sink current. The voltage of MOS_Drain is monitored for diagnosis. The driver has the following detection diagnosis: _Drain short to battery @ pre-driver = On state _Drain short to ground @ pre-driver = Off state _Drain open load @ pre-driver = Off state Predriver1 & Predriver3 can be used to drive ExtMos for O2H Load. For these two predrivers there is the possibility to select a lower gate current and sink current (typ = 250 µA). A dedicated MSC bit is used to select the predriver O2H function (Bit O2H_PDRV = CONFIG_REG_16_1[7:6]). Considering that this sink/source current is very low the logic will switch to the selected higher sink/source current after the cmd delay time (typ 150 µs for CONFIG_REG20[7]=PDRV_O2H_DLY=0 or 300 µs CONFIG_REG20[7]=PDRV_O2H_DLY=1). After the CMD delay time the current used is the one selected by CONFIG_REG4=PRDx_IDRV[1:0]. When the Predriver is used for O2H load the overcurrent detection can't be done using a VDS comparator due to slow voltage slew-rate, for this reason an external Rshunt has to be used. GADG0512161207PS GND1 MOS_Source MOS_Gate MOS_Drain VBAT Load MSC Command LS ExtNMOS Pre-Driver OFF state Drain short to Gnd, OL ON state Drain short to battery Driver VB_IN I_SOURCE I_SINK |
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