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RHFOSC04 bảng dữ liệu(PDF) 4 Page - STMicroelectronics |
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RHFOSC04 bảng dữ liệu(HTML) 4 Page - STMicroelectronics |
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4 / 16 page ![]() 3 Radiations Total dose (MIL-STD-883 TM 1019): The products guaranteed in radiation within the RHA QML-V system fully comply with the MIL-STD-883 TM 1019 specification. The RHFOSC04 is RHA QML-V, tested and characterized in full compliance with the MIL-STD-883 specification, between 50 and 300 rad/s only (full CMOS technology). All parameters provided in Table 5. DC electrical characteristics and Table 6. AC electrical characteristics apply to both pre- and post-irradiation, as follows: • All tests are performed in accordance with MIL-PRF-38535 and test method 1019 of MIL-STD-883 for total ionizing dose (TID) • The initial characterization is performed in qualification only on both biased and unbiased parts • Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results obtained during the initial qualification Heavy ions: The behavior of the product, when submitted to heavy ions, is not tested in production. Heavy-ion trials are performed on qualification lots only. Table 4. Radiations Symbol Characteristics Value Unit TID (1) High-dose rate (50 to 300 rad (Si) per second) 300 krad SEL (2) Performed at 125°C with a particle angle of 60° and a fluence of 1 x 107 n/cm2 (10 millions of particles per cm²) 125 MeV.cm²/mg Performed at 125°C with a particle angle of 0° and a fluence of 1 x 107 n/cm2 (10 millions of particles per cm²) 62 SET (3) Performed at 25°C 125 1. A total ionizing dose (TID) of 300 krad(Si) is equivalent to 3000 Gy(Si), (1 gray = 100 rad). 2. SEL: single event latch-up. 3. SET: single event transient. RHFOSC04 Radiations DS13330 - Rev 1 page 4/16 |
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