ATO25F1GC-30EC datasheet(39/46 Pages) ETC

39 / 46 page

39/46

Sep.2013. Rev 0.5

1Gbit Serial NAND Flash Memory

DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC Characteristic tables that follow

are derived from tests performed under the Measurement Conditions summarized in the

relevant tables. Designers should check that the operating conditions in their circuit match the

measurement conditions when relying on the quoted parameters.

Table 9.

Operating conditions

Symbol

Parameter

Min.

Max.

Unit

VCC

Supply voltage

2.7

3.6

Ambient operating temperature

E(Extended)

-30

°C

C(Commercial)

°C

I (Industrial)

-40

°C

Table 10.

Data retention and endurance

Parameter

Condition

Min.

Max.

Unit

Erase/Program cycles

100,000

cycles per sector

Data Retention

years

Table 11.

AC measurement conditions

Symbol

Parameter

Min.

Max.

Unit

Load capacitance

30(15pF/133MHz)

Input rise and fall times

Input pulse voltages

0.2VCC to 0.8VCC

Input timing reference voltages

0.3VCC to 0.7VCC

Output timing reference voltages

VCC / 2

Output Hi-Z is defined as the point where data out is no longer driven.

Figure 24.

AC measurement I/O waveform

Table 12.

Capacitance

(1)

Symbol

Parameter

Test condition

Min.

Max.

Unit

COUT

Output capacitance (Q)

VOUT = 0 V

CIN

Input capacitance (other pins)

VIN = 0 V

Sampled only, not 100% tested, at TA = 25 °C and a frequency of 20 MHz.

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