●Thermal resistance

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal resistance, junction - case

②

-

-

4.5

°C/W

Thermal resistance, junction - ambient

-

-

62.5

°C/W

Soldering temperature, wave soldering for 10s

-

-

265

°C

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Drain-Source Breakdown

Voltage

-20

V

Gate Threshold Voltage

-0.45

-0.70

-1.00

V

Drain-Source Leakage Current

-1.0

uA

Gate- Source Leakage Current

±100

nA

Static Drain-source On

Resistance

12.0

15.0

mΩ

16.0

20.0

mΩ

Forward Transconductance

10

s

Source-drain voltage

Is=-10A

0.88

1.28

V

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Input capacitance

Ciss

f = 1MHz

-

1545

-

pF

Output capacitance

Coss

-

168.7

-

Reverse transfer capacitance

Crss

-

148.1

-

℃)

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Total gate charge

Qg

-

24.5

-

nC

Gate - Source charge

Qgs

-

3.69

-

Gate - Drain charge

Qgd

-

4.58

-

Note:

① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ;

② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom

layer 1inch square copper plate；

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

2

www.sztuofeng.com

Feb 2022 V1.0

TF30P02