NJVMJD112G datasheet(3/11 Pages) ONSEMI

tên linh kiện	NJVMJD112G

Giải thích chi tiết về linh kiện	Complementary Darlington Power Transistors

PDF	11 Pages

Scroll/Zoom	100%

nhà sản xuất	ONSEMI [ON Semiconductor]

Trang chủ	http://www.onsemi.com

Logo

3 / 11 page

MJD112 (NPN), MJD117 (PNP)

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

VCEO

100

Vdc

Collector−Base Voltage

VCB

100

Vdc

Emitter−Base Voltage

VEB

Vdc

Collector Current

Continuous

Peak

Adc

Base Current

mAdc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

0.16

W/°C

Total Power Dissipation (Note1)

@ TA = 25°C

Derate above 25°C

1.75

0.014

W/°C

Operating and Storage Junction Temperature Range

TJ, Tstg

−65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance, Junction−to−Ambient (Note 1)

RqJA

71.4

°C/W

1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

NJVMJD112G bảng dữ liệu(PDF) 3 Page - ON Semiconductor

NJVMJD112G bảng dữ liệu(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11

bảng dữ liệu tải về

Link URL